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改善4-Mask工艺Al腐蚀的方法     有源层  腐蚀       2014/3/20
为了减少制造工艺的流程,改进的4-Mask工艺被广泛应用。但这个工艺仍存在一些问题,如果有源层刻蚀和第二次源漏数据线刻蚀之间间隔时间较长(≥5.9 h),则有源层刻蚀所用气体Cl2形成的活化分子会对沟道内Al造成腐蚀。除了缩短上述间隔时间的方法外,本文应用有源层刻蚀后处理加入SF6/O2的方法,很好地阻止了对Al的腐蚀,对改进后4-Mask工艺的进一步应用具有非常重要的意义。
Blur-mask approach (BMA) was developed to simulate the light distribution of locally controlled LED backlight, providing much lower computational complexity which is less than1% of that of conventiona...
Tellurium was studied as a mask film in a thermally induced superresoulution rewritable optical disk for detecting below-diffraction-limit marks.Mark trains of 0.15 could be retrieved with 9dB in carr...
We propose a novel transition-sensitive measurement approach for coherent optical systems. The time-resolved error vector magnitude (EVM), combined with mask testing, is a powerful tool for pass/fail ...
Digital lithography technique is a promising tool for the fabrication of binary optical element. In this paper, we present the mask-division technique to improve the lithography quality. A piece of ...
Fibre Bragg gratings were written through the polyimide coating of commercial high NA fibres with ultrafast 800 nm radiation. Index modulations =2X10 -4 remain after 140 hours at 360°C.

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