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ANISOTROPIC STEP STIFFNESS FROM A KINETIC MODEL OF EPITAXIAL GROWTH
epitaxial growth island dynamics step edge adatoms edge-atoms surface diffusion step stiffness line tension step edge kinetics kinetic steady state Gibbs–Thomson formula Ehrlich–Schwoebel barrier step permeability
2015/10/16
Starting from a detailed model for the kinetics of a step edge or island boundary, we derive a Gibbs–Thomson-type formula and the associated step stiffness as a function of the step edge orientation a...
We study theoretical aspects of step fluctuations on vicinal surfaces by adding conservative white noise to the Burton-Cabrera-Frank model in one spatial dimension. We consider material deposition fro...
Characterizing equilibrium in epitaxial growth
Characterizing equilibrium epitaxial growth
2015/10/16
Using a kinetic model of epitaxial growth, we describe how geometry controls kinetic pathways through which external deposition influences the state of a vicinal surface. The state of the surface is d...
Small fluctuations in epitaxial growth via conservative noise
Small fluctuations epitaxial growth conservative noise
2015/10/16
We study the combined effect of growth (material deposition from above) and nearest-neighbor entropic and force-dipole interactions in a stochastically perturbed system of N line defects (steps) on a ...
Emergence of step flow from an atomistic scheme of epitaxial growth in 1+1 dimensions
step flow atomistic scheme epitaxial growth 1+1 dimensions
2015/10/16
The Burton-Cabrera-Frank (BCF) model for the flow of line defects (steps) on crystal surfaces has offered useful insights into nanostructure evolution. This model has rested on phenomenological ground...
Epitaxial growth mechanisms of graphene and effects of substrates
Epitaxial growth mechanisms graphene effects of substrates
2012/2/29
The growth process of single layer graphene with and without substrate is investigated using ab-initio, finite temperature molecular dynamic calculations within density functional theory. An understan...
Graphene, a hexagonal sheet of sp2-bonded carbon atoms, has extraordinary properties which hold immense promise for future nanoelectronic applications. Unfor-tunately, the popular preparation methods ...
Fine tuning epitaxial strain in ferroelectrics: PbxSr(1-x)TiO3 on DyScO3
ferroelectrics strain thin films phase diagram phase boundaries
2010/11/24
Epitaxial strain can be efficiently used to modify the properties of ferroelectric thin films. From the experi-mental viewpoint, the challenge is to fine-tune the magnitude of the strain. We illustrat...
Effects of variable anisotropic-strain on the emission of neutral excitons confined in epitaxial quantum dots
Effects of variable anisotropic-strain neutral excitons epitaxial quantum dots
2010/11/22
We study the e ect of elastic anisotropic biaxial strain on the light emitted by neutral excitons confined in di erent kinds of semiconductor quantum dots (QDs). We find that the light polarization ro...
High temperature thermoelectric response of double-doped SrTiO$_3$ epitaxial films
High temperature thermoelectric response double-doped SrTiO$_3$ epitaxial films
2010/11/19
SrTiO3 is a promising n-type oxide semiconductor for thermoelectric energy conversion. Epitaxial thin lms of SrTiO3 doped with both La and oxygen vacancies have been synthesized by pulsed laser depos...
Tuning macro-twinned domain sizes and the b-variants content of the adaptive 14-modulated martensite in epitaxial Ni-Mn-Ga films by co-sputtering
Magnetic shape memory alloys epitaxial films adaptive modulated-martensites twinning
2010/11/19
order to obtain modulated-martensite in our epitaxial Ni-Mn-Ga films, we have tuned the composition by using a co-sputtering process. Here we present how the composition affects the variant distributi...
High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor
High growth rate 4H-SiC epitaxial growth hot-wall CVD reactor
2010/11/18
Thick, high quality 4H-SiC epilayers have been grown in a vertical hot-wall chemical
vapor deposition system at a high growth rate on (0001) 80 off-axis substrates. We
discuss the use of dichlorosil...
Generation of size-selected gold nanoparticles by spark discharge – for growth of epitaxial nanowires
spark discharge epitaxial nanowires
2009/7/28
One-dimensional semiconductor nanowires are a
promising candidate for future electronic devices.
The epitaxial growth of nanowires is often mediated
by metal seed particles, usually gold particles....
Methods of silicon surface structurization for the purpose of the deposition of III-V epitaxial layers
textured silicon substrates anisotropic etching
2011/5/10
This paper presents the results of the texturing of silicon substrates with various crystallographic orientations by anisotropic etching, both in a maskless process and in a process employing speciall...
Photoreflectance study of partially relaxed epitaxial InGaAs on GaAs
III-V semiconductors PR spectroscopy X-ray diffraction
2011/5/10
Room temperature photoreflectance (PR) spectroscopy and high resolution X-ray diffraction (HRXRD) have been used to investigate InxGa1–xAs layers grown compressively by MOVPE on GaAs substrates, with ...