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Effect of In content of the buffer layer on crystalline quality and electrical property of In0.82Ga0.18As/InP grown by LP-MOCVD
In0.82Ga0.18As Buffer layer MOCVD
2011/12/15
The In0.82Ga0.18As grown on InP (1 0 0) substrates by low pressure metalorganic chemical vapor deposition (LP-MOCVD) with twostep growth method was investigated. It was analyzed that the effect of In ...